Description

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

1) VDS=200V,ID=20A,RDS(ON) =180MΩ (Max)@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON). 

5) Excellent package for good heat dissipation.